РУАЭСТ (RUAEST)
The GAN Era has Arrived in SATCOM Power Ampliёers
In this paper features, characteristics and comparisons of gallium nitride high electron mobility transistors (GaNHEMTs) power ampliёers are considered.Maximum operating temperature widespread now, gallium arsenide GaAs transistors is 175o C. They are inferior to the transistors based on gallium nitride GaN, and keep steadily working frequency characteristics at operating temperatures up to 2500C. This greatly reduces the problem of heat removal. These transistors operate at voltages up to 100 V against the maximum of 20 V for GaAs transistors at equivalent power output. Therefore, GaN transistors and power ampliёers, they are particularly relevant for applications in space exploration. In Paradise Datacom (USA) designed power ampliёers in different ranges of frequencies with a power output of up to 50 to 750 watts.